- The new process module development required for the new IGBT technology platform.
- Process optimization for the yield improvement and performance enhancement for the new IGBT product development
- Defect density control or finding the critical process and working with the defect density department to improve it.
- Closely collaborates with the UPD and the device engineering team
- Statistical data analysis for the probed data and finding the correlation between the processes and the final performance of the devices.
- failure analysis for the wafer related issues and root cause define.

- BS degree or over in electrical/electronic engineering, material science or physics
- At least 8 years experience in the process integration with preference for +12 years experience in the power semiconductor areas, e.g. IGBT, FRD, and MOSFET.
- Deep understanding on device physics and process of power device are desired
Fluency in oral and written English communication.

- 원서 마감후 1차(서류) 합격자에 한하여 개별연락
- 이력서에 연락처, 희망연봉 게재
- 해외여행에 결격 사유가 없는 자